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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2927
DESCRIPTION *With TO-220 package *High collector-emitter voltage : VCEO=300V *High frequency:fT=40MHz(Min) APPLICATIONS *For use in line-operated color TV chroma output circuits and sound output circuits.
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 300 300 7 0.2 10 150 -55~150 UNIT V V V A W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10A ;IE=0 IC=1mA ;IB=0 IE=10A ;IC=0 IC=50mA ;IB=5mA VCB=200V;IE=0 VEB=5V; IC=0 IC=10mA ; VCE=10V IC=10mA ; VCE=30V 40 40 MIN 300 300 7
2SC2927
TYP.
MAX
UNIT V V V
2.0 0.1 0.1 200 80
V A A
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2927
Fig.2 outline dimensions (unindicated tolerance:0.10 mm)
3

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